Henan Yiyong Intelligent Technology Co., Ltd

PRODUCT DISPLAY

National Consultation Hotline：

15738867410

Company address：

Greenland Binhu International City (District 1), Erqi District, Zhengzhou City, Henan Province

1200℃ Intelligent PECVD System

This system operates at a maximum temperature of 1200°C and incorporates RF (radio frequency) plasma technology to significantly reduce reaction activation energy. It features independent PID temperature control, multi-channel MFC gas ratio adjustment, and a high-vacuum unit. Supporting both atmospheric and low-pressure PECVD processes, the system includes programmed temperature control, automatic matching, and multiple safety protections, making it suitable for controllable preparation of photovoltaic, semiconductor, and nano-functional thin films.

Details

Overview

This PECVD system integrates high-temperature heating and RF plasma enhancement for thin film research. It supports substrate heating up to 1200℃ and low-temperature plasma deposition, suitable for graphene, DLC, silicon-based films, insulating layers and optical coatings. Widely used in university and institutional labs for photovoltaic, semiconductor, MEMS and surface engineering research.

Core Features

RF Plasma & High-Temperature Heating

13.56 MHz RF unit (0–300W/500W) with automatic impedance matching. Stable plasma enables deposition at 400–600℃. Silicon carbide heaters allow max 1200℃; selectable thermal CVD, PECVD or combined modes.

Precision Temperature Control

Single/dual-zone PID control (±1℃). Supports 30+ segmented temperature profiles with programmable ramp/hold/cooling and plasma sequence control. Real-time data logging for repeatability.

Multi-Channel Gas Delivery

4–8 gas lines with imported MFCs (±1% F.S.). Accurate mixing of process and carrier gases. Pre-mixing chamber and bypass exhaust stabilize chamber pressure during switching.

Vacuum & Pressure Control

Compatible with atmospheric and low-pressure PECVD. Standard ultimate vacuum ≤5×10⁻³ Pa; upgradable to 1×10⁻⁵ Pa with molecular pump. High-precision gauge and electric valve for closed-loop pressure regulation.

Control & Safety

PLC + 10-inch touchscreen. Displays temperature, vacuum, flow, RF power. Stores recipes, supports data export. Safety interlocks: over-temperature, water flow, overcurrent, RF reflection, emergency stop and gas alarm.

Technical Parameters

Item	Specification
Model	Smart-PECVD-1200
Heating Element	High-purity silicon carbide rod
Temperature Zones	Single / dual (optional)
Max Temperature	1200℃; stable ≤1150℃
Constant Zone Length	≥300mm (single zone)
Temperature Accuracy	±1℃
Ramp Rate	0.1–20°C/min, programmable
RF Frequency	13.56 MHz
RF Power	0–300W / 0–500W (adjustable)
Matching	Automatic impedance matching
Reaction Chamber	High-purity quartz tube, Φ60/80/100 mm × 1000–1200 mm
Gas Channels	4/6/8 (expandable)
Flow Control	Imported MFC, 0–10 to 0–500 SCCM
Ultimate Vacuum	≤5×10⁻³ Pa (standard); ≤1×10⁻⁵ Pa (upgrade)
Pressure Control	Electric butterfly valve + PID
Cooling	Air cooling / water-cooled flange & electrode
Control	10-inch touchscreen + PLC
Power	AC 380V, 50Hz, 8–12kW

Applications

Graphene preparation
DLC coating deposition
Amorphous/microcrystalline silicon films
Silicon nitride/silicon oxide dielectric layers
Carbon nanotube arrays
Optical anti-reflective and reflective coatings

Highlights

This system combines high-temperature process stability with plasma-enhanced deposition. It supports flexible process modes, precise parameter control and reliable safety design. Suitable for research labs working on new energy, semiconductor materials and surface coatings.

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